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- Hydrostatic
pressure
dependence of
isoelectronic
bound excitons
in
beryllium-dope
d silicon: Physical
Review B, Vol.
53, No. 8. (15
February
1996),
4434.Sangsig
Kim, Irving
Herman, Karen
Moore, Dennis
Hall, Joze
Bevk
Source: Physical Review B, Vol. 53, No. 8. (15 February 1996), 4434. - Bound exciton
recombination
in
beryllium-dope
d silicon: Journal of
Physics C:
Solid State
Physics, Vol.
14, No. 10.
(1981), pp.
L255-L261.The
low-temperatur
e
photoluminesce
nce of
beryllium-dope
d silicon is
dominated by a
system with
sharp
no-phonon
lines at
approximately
1.077 eV with
well resolved
phonon-assiste
d replicas at
lower
energies. The
temperature
dependence of
the relative
intensities of
the no-phonon
lines and of
the
phonon-assiste
d structure is
similar to
that which has
been observed
for
electron-hole
recombination
at axial
isoelectronic
traps in
gallium
phosphide.
Using Zeeman
spectroscopy
the
recombination
centre in
beryllium-dope
d silicon is
shown to have
(001) symmetry
and is
identified
with beryllium
substitutional
-interstitial
pairs which
are expected
to predominate
in this
material. A
weak
acceptor-like
bound exciton
spectrum is
also
reported.MO
Henry, EC
Lightowlers, N
Killoran, DJ
Dunstan, BC
Cavenett
Source: Journal of Physics C: Solid State Physics, Vol. 14, No. 10. (1981), pp. L255-L261. - A complex
luminescent
defect in
Be-doped
oxygen-rich
silicon: Semiconductor
Science and
Technology,
Vol. 11, No.
7. (1996), pp.
996-1001.A
photoluminesce
nce (PL) study
of oxygen-rich
(CZ) silicon
subject to
beryllium ion
implantation
and subsequent
annealing is
reported. A
characteristic
bound exciton
luminescence
spectrum is
observed with
a narrow
zero-phonon
line at
1137.98(5)
meV, denoted ,
accompanied by
a vibrational
sideband
extending for
more than 200
meV from the
zero-phonon
line and
containing
lattice- and
defect-related
vibrational
modes. The
spectrum is
not observed
in
oxygen-lean,
float zone
(FZ) silicon
except where
beryllium and
oxygen are
co-implanted.
The response
of the
luminescence
system to
external
perturbations
such as
temperature,
uniaxial
stress and
magnetic
fields are
reported. The
defect
structure is
found to have
rhombic I
symmetry and
the absence of
any splitting
in a magnetic
field
indicates that
the line is a
magnetic
singlet. The
data are
interpreted in
the context of
a pseudodonor
model.SE Daly,
MO Henry, KG
Mcguigan, Do
Carmo
Source: Semiconductor Science and Technology, Vol. 11, No. 7. (1996), pp. 996-1001.
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